Christian Unger
Nottingham, 2018, doi: 10.1109/ESARS-ITEC.2018.8607785 Unger, C. ; Pfo st, M. : Influence of the Off-State Gate-Source Voltage on the Transient Drain Current Response in SiC MOSFETs , ISPSD2018 - The 30th [...] 30th International Symposium on Power Semiconductor Devices and ICs , Chicago, USA , 05.2018, doi: 10.1109/ISPSD.2018.8393599 Unger, C. ; Pfost, M. ; Mocanu, M.; Waltereit, P.; Reiner, R. : Pulse robustness [...] Pfost, M. : A Comparison of the Transient Behavior of the Drain Current Hysteresis in SiC-MOSFETs , 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road …
