Thorsten Oeder
CHN, 05.2019, doi: 10.1109/ISPSD.2019.8757570 Oeder, T. ; Pfost, M. ; D'Aniello, F.; Fayyaz, A.; Castellazzi, A. : Damage Accumulation in GaN GITs Exposed to Repetitive Short-Circuit , ISPSD2019 - The 31th [...] HEMTs , Halbleiterkolloquium, Freiburg, 10.2019 Oeder, T. ; Pfost, M. : Impact of Carrier Accumulation on the Transient Behavior of p-Gate GaN HEMTs , ISPSD2019 - The 31th International Symposium on Power [...] 31th International Symposium on Power Semiconductor Devices and ICs, Shanghai, CHN, 05.2019, doi: 10.1109/ISPSD.2019.8757692 Oeder, T. ; Pfost, M. : Einfluss akkumulierter Ladung auf das transiente Verhalten …
