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EWA
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Forschung
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Themen
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Halbleiter-Bauelemente
Galliumnitrid (GaN)
Behavior of p-Gate GaN HEMTs , ISPSD2019 - The 31th International Symposium on Power Semiconductor Devices and ICs, Shanghai, CHN, 05.2019, doi: 10.1109/ISPSD.2019.8757570 Oeder, T. ; Pfost, M. ; D'Aniello [...] Exposed to Repetitive Short-Circuit , ISPSD2019 - The 31th International Symposium on Power Semiconductor Devices and ICs, Shanghai, CHN, 05.2019, doi: 10.1109/ISPSD.2019.8757692 Oeder, T. ; Pfost, M. ; Castellazzi …